Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn80Pb20) |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 400V |
Max Power Dissipation | 115W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | 18A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | NG*18N40CL |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 115W |
Case Connection | COLLECTOR |
Input Type | Logic |
Transistor Application | AUTOMOTIVE IGNITION |
Rise Time | 4.5ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.5V |
Max Collector Current | 18A |
Collector Emitter Breakdown Voltage | 430V |
Turn On Time | 5200 ns |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 4V, 15A |
Turn Off Time-Nom (toff) | 13000 ns |
Current - Collector Pulsed (Icm) | 50A |
Gate-Emitter Voltage-Max | 18V |
Gate-Emitter Thr Voltage-Max | 1.9V |
Fall Time-Max (tf) | 15000ns |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |