NGB8202NT4G
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 150W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 20A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NGB8202 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Rise Time-Max | 8000ns |
| Element Configuration | Single |
| Power Dissipation | 150W |
| Case Connection | COLLECTOR |
| Input Type | Logic |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 440V |
| Max Collector Current | 20A |
| Collector Emitter Breakdown Voltage | 440V |
| Max Breakdown Voltage | 440V |
| Turn On Time | 6500 ns |
| Test Condition | 300V, 9A, 1k Ω, 5V |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Turn Off Time-Nom (toff) | 18500 ns |
| Current - Collector Pulsed (Icm) | 50A |
| Td (on/off) @ 25°C | -/5μs |
| Gate-Emitter Voltage-Max | 15V |
| Gate-Emitter Thr Voltage-Max | 2.1V |
| Fall Time-Max (tf) | 14000ns |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
