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NGB8206NG

NGB8206NG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NGB8206NG
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 280
  • Description: NGB8206NG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation 150W
Case Connection COLLECTOR
Input Type Logic
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 20A
Collector Emitter Breakdown Voltage 390V
Turn On Time 6500 ns
Test Condition 300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff) 18500 ns
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C -/5μs
Gate-Emitter Voltage-Max 15V
Gate-Emitter Thr Voltage-Max 2.1V
Fall Time-Max (tf) 14000ns
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 350V
Max Power Dissipation 150W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NGB8206
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Rise Time-Max 8000ns
See Relate Datesheet

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