Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 165W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | NGB8207 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Rise Time-Max | 2700ns |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Logic |
Power - Max | 165W |
Transistor Application | AUTOMOTIVE IGNITION |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 365V |
Max Collector Current | 20A |
Collector Emitter Breakdown Voltage | 365V |
Turn On Time | 2450 ns |
Vce(on) (Max) @ Vge, Ic | 2.6V @ 4V, 20A |
Turn Off Time-Nom (toff) | 14700 ns |
Current - Collector Pulsed (Icm) | 50A |
Gate-Emitter Voltage-Max | 15V |
Gate-Emitter Thr Voltage-Max | 2V |
Fall Time-Max (tf) | 15000ns |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |