Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 156W |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 156W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 72 ns |
Power - Max | 229W |
Transistor Application | MOTOR CONTROL |
Halogen Free | Halogen Free |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 165 ns |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 30A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 2.2V |
Turn On Time | 91 ns |
Test Condition | 600V, 15A, 15 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A |
Turn Off Time-Nom (toff) | 435 ns |
IGBT Type | Trench Field Stop |
Gate Charge | 160nC |
Current - Collector Pulsed (Icm) | 120A |
Td (on/off) @ 25°C | 72ns/165ns |
Switching Energy | 2.1mJ (on), 560μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Height | 21.08mm |
Length | 16.26mm |
Width | 5.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |