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NGTB15N120LWG

NGTB15N120LWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NGTB15N120LWG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 441
  • Description: NGTB15N120LWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 156W
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 156W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 72 ns
Power - Max 229W
Transistor Application MOTOR CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 165 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 91 ns
Test Condition 600V, 15A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Turn Off Time-Nom (toff) 435 ns
IGBT Type Trench Field Stop
Gate Charge 160nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 72ns/165ns
Switching Energy 2.1mJ (on), 560μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.08mm
Length 16.26mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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