NGTB15N60EG
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 117W |
| Pin Count | 3 |
| Element Configuration | Single |
| Power Dissipation | 47W |
| Input Type | Standard |
| Turn On Delay Time | 78 ns |
| Power - Max | 117W |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 130 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 30A |
| Reverse Recovery Time | 270 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.95V |
| Test Condition | 400V, 15A, 22 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 15A |
| IGBT Type | NPT |
| Gate Charge | 80nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 78ns/130ns |
| Switching Energy | 900μJ (on), 300μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Height | 15.75mm |
| Length | 10.28mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
