Parameters | |
---|---|
Package / Case | TO-247-3 |
Surface Mount | NO |
Number of Pins | 3 |
Weight | 6.500007g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 192W |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 89 ns |
Power - Max | 192W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 235 ns |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 50A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 2.3V |
Turn On Time | 117 ns |
Test Condition | 600V, 25A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 25A |
Turn Off Time-Nom (toff) | 475 ns |
IGBT Type | Trench Field Stop |
Gate Charge | 200nC |
Current - Collector Pulsed (Icm) | 200A |
Td (on/off) @ 25°C | 89ns/235ns |
Switching Energy | 3.4mJ (on), 800μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Height | 21.08mm |
Length | 16.26mm |
Width | 5.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Mounting Type | Through Hole |