NGTB30N60SWG
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 189W |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 189W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 200 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.6V |
| Turn On Time | 90 ns |
| Test Condition | 400V, 30A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 285 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 90nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 57ns/109ns |
| Switching Energy | 750μJ (on), 540μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Height | 21.08mm |
| Length | 16.26mm |
| Width | 5.3mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
See Relate Datesheet
