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NGTB40N65FL2WG

ON SEMICONDUCTOR NGTB40N65FL2WGIGBT Single Transistor, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 Pins


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NGTB40N65FL2WG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 326
  • Description: ON SEMICONDUCTOR NGTB40N65FL2WGIGBT Single Transistor, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 Pins (Kg)

Details

Tags

Parameters
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 2.1V
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 170nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 84ns/177ns
Switching Energy 970μJ (on), 440μJ (off)
Height 21.08mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 366W
Element Configuration Single
Input Type Standard
Power - Max 366W
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 72 ns
See Relate Datesheet

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