Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.500007g |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 535W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 535W |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 100A |
Reverse Recovery Time | 256 ns |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 2.2V |
Test Condition | 600V, 50A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 50A |
IGBT Type | Trench Field Stop |
Gate Charge | 311nC |
Current - Collector Pulsed (Icm) | 200A |
Td (on/off) @ 25°C | 118ns/282ns |
Switching Energy | 4.4mJ (on), 1.4mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Height | 21.4mm |
Length | 16.25mm |
Width | 5.3mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |