NGTB50N65FL2WG
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2015 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 417W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 417W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 100A |
| Reverse Recovery Time | 94 ns |
| Collector Emitter Breakdown Voltage | 650V |
| Test Condition | 400V, 50A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| IGBT Type | Trench Field Stop |
| Gate Charge | 220nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 100ns/237ns |
| Switching Energy | 1.5mJ (on), 460μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
