Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2000 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 385W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 385W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.4V |
Max Collector Current | 50A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 178 ns |
Test Condition | 600V, 25A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 25A |
Turn Off Time-Nom (toff) | 430 ns |
IGBT Type | Trench Field Stop |
Gate Charge | 178nC |
Current - Collector Pulsed (Icm) | 100A |
Td (on/off) @ 25°C | 87ns/179ns |
Switching Energy | 1.95mJ (on), 600μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |