NIF9N05CLT3
| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 52V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 2.6A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Power Dissipation-Max | 1.69W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.69W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 125m Ω @ 2.6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 35V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V |
| Rise Time | 290ns |
| Drive Voltage (Max Rds On,Min Rds On) | 3V 10V |
| Vgs (Max) | ±15V |
| Fall Time (Typ) | 290 ns |
| Turn-Off Delay Time | 1.54 μs |
| Continuous Drain Current (ID) | 2.6A |
| Gate to Source Voltage (Vgs) | 15V |
| Drain-source On Resistance-Max | 0.125Ohm |
| Drain to Source Breakdown Voltage | 52V |
| Pulsed Drain Current-Max (IDM) | 10A |
| Avalanche Energy Rating (Eas) | 110 mJ |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Lifecycle Status | OBSOLETE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 4 |
See Relate Datesheet
