Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 2 weeks ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 4-PowerDFN |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn90Pb10) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 24V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | 9.5A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 1.4W Ta |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.7W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 13m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 9.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Rise Time | 15ns |
Vgs (Max) | ±10V |
Fall Time (Typ) | 6.5 ns |
Turn-Off Delay Time | 22.5 ns |
Continuous Drain Current (ID) | 9.5A |
Gate to Source Voltage (Vgs) | 10V |
Drain-source On Resistance-Max | 0.016Ohm |
Drain to Source Breakdown Voltage | 24V |
Avalanche Energy Rating (Eas) | 50 mJ |
FET Feature | Current Sensing |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |