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NILMS4501NR2

MOSFET N-CH 24V 9.5A 4-LLP


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NILMS4501NR2
  • Package: 4-PowerDFN
  • Datasheet: PDF
  • Stock: 426
  • Description: MOSFET N-CH 24V 9.5A 4-LLP (Kg)

Details

Tags

Parameters
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-PowerDFN
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn90Pb10)
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 9.5A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.4W Ta
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 6V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 15ns
Vgs (Max) ±10V
Fall Time (Typ) 6.5 ns
Turn-Off Delay Time 22.5 ns
Continuous Drain Current (ID) 9.5A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.016Ohm
Drain to Source Breakdown Voltage 24V
Avalanche Energy Rating (Eas) 50 mJ
FET Feature Current Sensing
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

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