NJL1302DG
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-5 |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -260V |
| Max Power Dissipation | 200W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -15A |
| Frequency | 30MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 5 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Transistor Type | PNP + Diode (Isolated) |
| Collector Emitter Voltage (VCEO) | 260V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 5A 5V |
| Current - Collector Cutoff (Max) | 50μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 1A, 10A |
| Collector Emitter Breakdown Voltage | 260V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | 3V |
| Collector Base Voltage (VCBO) | 260V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| Height | 25.98mm |
| Length | 19.89mm |
| Width | 4.89mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
See Relate Datesheet
