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NJL4281DG

NJL4281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NJL4281DG
  • Package: TO-264-5
  • Datasheet: PDF
  • Stock: 487
  • Description: NJL4281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 21 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-5
Number of Pins 5
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 260V
Max Power Dissipation 230W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 35MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 230W
Transistor Application AMPLIFIER
Gain Bandwidth Product 35MHz
Transistor Type NPN + Diode (Isolated)
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 8A
Collector Emitter Breakdown Voltage 350V
Transition Frequency 35MHz
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Height 6.35mm
Length 6.35mm
Width 50.8mm
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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