NP40N10VDF-E1-AY
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Package / Case | TO-252 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Vendor Undefined |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Powers |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 175°C |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (Abs) (ID) | 40A |
| Pulsed Drain Current-Max (IDM) | 80A |
| DS Breakdown Voltage-Min | 100V |
| Avalanche Energy Rating (Eas) | 61 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 1.2W |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
