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NSBA123JDXV6T1G

Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NSBA123JDXV6T1G
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 332
  • Description: Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 0.047
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC -50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number NSBA1*
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 357mW
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 2.2k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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