NSBA144WDXV6T1G
| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 50V |
| hFE Min | 80 |
| Resistor - Base (R1) | 47k Ω |
| Resistor - Emitter Base (R2) | 22k Ω |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 2.1 |
| Subcategory | BIP General Purpose Small Signals |
| Max Power Dissipation | 500mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Polarity | PNP |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Power - Max | 500mW |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
See Relate Datesheet
