NSBC113EPDXV6T1
| Parameters | |
|---|---|
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN AND PNP |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Collector Emitter Breakdown Voltage | 50V |
| Resistor - Base (R1) | 1k Ω |
| Resistor - Emitter Base (R2) | 1k Ω |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 1 |
| Subcategory | BIP General Purpose Small Signal |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 500mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Current Rating | 100mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NSBC1* |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-F6 |
| Qualification Status | Not Qualified |
See Relate Datesheet
