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NSBC113EPDXV6T1G

Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NSBC113EPDXV6T1G
  • Package: SOT-563-6
  • Datasheet: PDF
  • Stock: 552
  • Description: Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
DC Current Gain-Min (hFE) 3
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Continuous Collector Current 100mA
Package / Case SOT-563-6
Height 550μm
Surface Mount YES
Length 1.6mm
Number of Pins 6
Width 1.2mm
Weight 8.193012mg
RoHS Status ROHS3 Compliant
Packaging Tape & Reel (TR)
Lead Free Lead Free
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Polarity NPN
Element Configuration Dual
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 3
See Relate Datesheet

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