Parameters | |
---|---|
Number of Elements | 2 |
Polarity | NPN, PNP |
Element Configuration | Dual |
Power Dissipation | 357mW |
Transistor Application | SWITCHING |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Collector Emitter Voltage (VCEO) | 50V |
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V |
Current - Collector Cutoff (Max) | 500nA |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
Collector Emitter Breakdown Voltage | 50V |
Max Breakdown Voltage | 50V |
hFE Min | 80 |
Resistor - Base (R1) | 10k Ω |
Continuous Collector Current | 100mA |
Resistor - Emitter Base (R2) | 47k Ω |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Surface Mount | YES |
Number of Pins | 6 |
Packaging | Tape & Reel (TR) |
Published | 2003 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 4.7 |
Subcategory | BIP General Purpose Small Signal |
Voltage - Rated DC | 50V |
Max Power Dissipation | 500mW |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 100mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | NSBC1* |
Pin Count | 6 |