NSDEMN11XV6T1G
| Parameters | |
|---|---|
| Power Dissipation-Max | 0.5W |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100nA @ 70V |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA |
| Operating Temperature - Junction | -55°C~150°C |
| Output Current-Max | 0.1A |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) | 100mA DC |
| Reverse Recovery Time | 4ns |
| Diode Configuration | 2 Pair Common Cathode |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | TIN |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-F6 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 4 |
See Relate Datesheet
