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NSL12AWT1

NSL12AWT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NSL12AWT1
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 264
  • Description: NSL12AWT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Current - Collector (Ic) (Max) 2A
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -170mV
Collector Base Voltage (VCBO) -12V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation 450mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Current Rating -3A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number NSL12A
Pin Count 6
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 290mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 800mA 1.5 V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 290mV @ 20mA, 1A
Collector Emitter Breakdown Voltage 12V
See Relate Datesheet

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