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NSL12AWT1G

NSL12AWT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NSL12AWT1G
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 612
  • Description: NSL12AWT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation 450mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NSL12A
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 650mW
Power - Max 450mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 800mA 1.5 V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 290mV @ 20mA, 1A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -170mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 12V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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