Parameters | |
---|---|
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Surface Mount | YES |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Max Power Dissipation | 2W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Frequency | 120MHz |
Base Part Number | NSS1C200 |
Pin Count | 4 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 2W |
Case Connection | COLLECTOR |
Power - Max | 800mW |
Transistor Application | SWITCHING |
Halogen Free | Halogen Free |
Gain Bandwidth Product | 120MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 220mV @ 200mA, 2A |
Collector Emitter Breakdown Voltage | 100V |
Current - Collector (Ic) (Max) | 2A |
Transition Frequency | 120MHz |
Max Breakdown Voltage | 100V |
Collector Base Voltage (VCBO) | 140V |
Emitter Base Voltage (VEBO) | 7V |
hFE Min | 150 |