banner_page

NSS30100LT1G

NSS30100LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NSS30100LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 725
  • Description: NSS30100LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 310mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NSS30100
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 710mW
Power - Max 310mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -650mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good