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NSS35200CF8T1G

NSS35200CF8T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NSS35200CF8T1G
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 938
  • Description: NSS35200CF8T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -35V
Max Power Dissipation 635mW
Terminal Position DUAL
Terminal Form C BEND
Current Rating -2A
Frequency 100MHz
Base Part Number NSS35200
Pin Count 8
Number of Elements 1
Element Configuration Single
Power Dissipation 13.5W
Power - Max 635mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 35V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 20mA, 2A
Collector Emitter Breakdown Voltage 35V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 35V
Collector Base Voltage (VCBO) 55V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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