Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | -35V |
Max Power Dissipation | 625mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -2A |
Frequency | 100MHz |
Base Part Number | NSS35200 |
Pin Count | 6 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1W |
Power - Max | 625mW |
Transistor Application | SWITCHING |
Halogen Free | Halogen Free |
Gain Bandwidth Product | 100MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 35V |
Max Collector Current | 2A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A 1.5V |
Current - Collector Cutoff (Max) | 100nA |
Vce Saturation (Max) @ Ib, Ic | 310mV @ 20mA, 2A |
Collector Emitter Breakdown Voltage | 35V |
Transition Frequency | 100MHz |
Collector Emitter Saturation Voltage | -260mV |
Max Breakdown Voltage | 35V |
Collector Base Voltage (VCBO) | 55V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 100 |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |