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NSS40200UW6T1G

NSS40200UW6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NSS40200UW6T1G
  • Package: 6-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 184
  • Description: NSS40200UW6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 875mW
Terminal Position DUAL
Frequency 140MHz
Base Part Number NSS40200
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Power - Max 875mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 20mA, 2A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage -100mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 7V
hFE Min 250
Turn On Time-Max (ton) 220ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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