Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 661mW |
Terminal Form | FLAT |
Frequency | 100MHz |
Base Part Number | NST30010M |
Pin Count | 6 |
Number of Elements | 2 |
Polarity | PNP |
Element Configuration | Dual |
Power Dissipation | 661mW |
Power - Max | 500mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 100MHz |
Transistor Type | 2 PNP (Dual) Matched Pair |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA 5V |
Current - Collector Cutoff (Max) | 15nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
Collector Emitter Breakdown Voltage | 30V |
Transition Frequency | 100MHz |
Collector Emitter Saturation Voltage | -600mV |
Max Breakdown Voltage | 30V |
Collector Base Voltage (VCBO) | 30V |
Emitter Base Voltage (VEBO) | 5V |
Height | 600μm |
Length | 1.7mm |
Width | 1.3mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |