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NSVB114YPDXV6T1G

TRANS BRT 50V 100MA SOT563


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NSVB114YPDXV6T1G
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 467
  • Description: TRANS BRT 50V 100MA SOT563 (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO 4.7
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 500mW
Terminal Form FLAT
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type NPN AND PNP
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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