NSVBCP56-10T3G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.5W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Reference Standard | AEC-Q101 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Power - Max | 1.5W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 130MHz |
| Frequency - Transition | 130MHz |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
