NSVMUN5312DW1T3G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| Subcategory | BIP General Purpose Small Signal |
| Max Power Dissipation | 250mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PDSO-G6 |
| Operating Temperature (Max) | 150°C |
| Operating Temperature (Min) | -55°C |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Power - Max | 250mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN AND PNP |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
| Collector Emitter Breakdown Voltage | 50V |
| Resistor - Base (R1) | 22k Ω |
| Resistor - Emitter Base (R2) | 22k Ω |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
