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NSVT65010MW6T1G

ON SEMICONDUCTOR - NSVT65010MW6T1G - Bipolar Transistor Array, Dual PNP, -65 V, 380 mW, -100 mA, 0.9 hFE, SOT-363


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NSVT65010MW6T1G
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 728
  • Description: ON SEMICONDUCTOR - NSVT65010MW6T1G - Bipolar Transistor Array, Dual PNP, -65 V, 380 mW, -100 mA, 0.9 hFE, SOT-363 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 380mW
Polarity PNP
Power - Max 380mW
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Max Breakdown Voltage 65V
Frequency - Transition 100MHz
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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