Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 1.5Ohm |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | 238mA |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 300mW Tj |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300mW |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3 Ω @ 10mA, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 5V |
Current - Continuous Drain (Id) @ 25°C | 238mA Tj |
Rise Time | 15ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±10V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 98 ns |
Continuous Drain Current (ID) | 238mA |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 10V |
Drain to Source Breakdown Voltage | 20V |
Nominal Vgs | 1 V |
Feedback Cap-Max (Crss) | 6 pF |
Height | 800μm |
Length | 1.6256mm |
Width | 900μm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |