Parameters | |
---|---|
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 45m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 225pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 23A Ta |
Gate Charge (Qg) (Max) @ Vgs | 3.76nC @ 4.5V |
Rise Time | 14.9ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 2 ns |
Turn-Off Delay Time | 9.9 ns |
Continuous Drain Current (ID) | 23A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 6A |
Drain-source On Resistance-Max | 0.06Ohm |
Drain to Source Breakdown Voltage | 25V |
Pulsed Drain Current-Max (IDM) | 60A |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Lifecycle Status | OBSOLETE (Last Updated: 4 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 25V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 23A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 37.5W Tj |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 37.5W |