Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | -60V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Current Rating | -25A |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 120W Tj |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 120W |
Case Connection | DRAIN |
Turn On Delay Time | 14 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 82m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 27.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Rise Time | 72ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±15V |
Polarity/Channel Type | N-CHANNEL |
Fall Time (Typ) | 190 ns |
Turn-Off Delay Time | 43 ns |
Continuous Drain Current (ID) | 27.5A |
Gate to Source Voltage (Vgs) | 15V |
Drain-source On Resistance-Max | 0.082Ohm |
Drain to Source Breakdown Voltage | -60V |
Pulsed Drain Current-Max (IDM) | 80A |
Avalanche Energy Rating (Eas) | 600 mJ |
Height | 4.83mm |
Length | 10.29mm |
Width | 9.65mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Number of Pins | 3 |