Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Rise Time | 65ns |
Operating Temperature | -55°C~175°C TJ |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Vgs (Max) | ±20V |
JESD-609 Code | e3 |
Fall Time (Typ) | 85 ns |
Pbfree Code | yes |
Turn-Off Delay Time | 85 ns |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Continuous Drain Current (ID) | 136A |
Gate to Source Voltage (Vgs) | 20V |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Drain-source On Resistance-Max | 0.0045Ohm |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Drain to Source Breakdown Voltage | 40V |
Technology | MOSFET (Metal Oxide) |
Pulsed Drain Current-Max (IDM) | 258A |
Terminal Form | GULL WING |
Radiation Hardening | No |
Pin Count | 3 |
RoHS Status | RoHS Compliant |
JESD-30 Code | R-PSSO-G2 |
Lead Free | Lead Free |
Number of Elements | 1 |
Power Dissipation-Max | 5.4W Ta 254W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 167W |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.5m Ω @ 40A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 32V |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 5 days ago) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Current - Continuous Drain (Id) @ 25°C | 167A Tc |
Surface Mount | YES |