Parameters | |
---|---|
Current - Continuous Drain (Id) @ 25°C | 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Rise Time | 84ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 71 ns |
Turn-Off Delay Time | 52 ns |
Continuous Drain Current (ID) | 42A |
Gate to Source Voltage (Vgs) | 20V |
Factory Lead Time | 1 Week |
Drain to Source Breakdown Voltage | 100V |
Avalanche Energy Rating (Eas) | 200 mJ |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Contact Plating | Tin |
Height | 4.83mm |
Length | 10.29mm |
Mounting Type | Surface Mount |
Width | 9.65mm |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1999 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 28MOhm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 136W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 136W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 28m Ω @ 42A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |