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NTB6413ANT4G

MOSFET NFET D2PAK 100V 40A 30MO


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTB6413ANT4G
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 353
  • Description: MOSFET NFET D2PAK 100V 40A 30MO (Kg)

Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Rise Time 84ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 71 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 20V
Factory Lead Time 1 Week
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 200 mJ
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Height 4.83mm
Length 10.29mm
Mounting Type Surface Mount
Width 9.65mm
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 28MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 136W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 136W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 28m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
See Relate Datesheet

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