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NTB75N03RT4G

MOSFET N-CH 25V 9.7A D2PAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTB75N03RT4G
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 303
  • Description: MOSFET N-CH 25V 9.7A D2PAK (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 21 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 75A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.25W Ta 74.4W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 74.4W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1333pF @ 20V
Current - Continuous Drain (Id) @ 25°C 9.7A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 18.4 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.7A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 225A
Avalanche Energy Rating (Eas) 71.7 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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