banner_page

NTD110N02RG

N-CHANNEL POWER MOSFET


  • Manufacturer: Rochester Electronics, LLC
  • Nocochips NO: 699-NTD110N02RG
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 883
  • Description: N-CHANNEL POWER MOSFET (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Ta 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3.44pF @ 20V
Current - Continuous Drain (Id) @ 25°C 12.5A Ta 110A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Drain to Source Voltage (Vdss) 24V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 12.5A
Drain-source On Resistance-Max 0.0062Ohm
Pulsed Drain Current-Max (IDM) 110A
DS Breakdown Voltage-Min 24V
Avalanche Energy Rating (Eas) 120 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good