Parameters | |
---|---|
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 54mOhm |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 18A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 2.1W Ta 55W Tj |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 55W |
Case Connection | DRAIN |
Turn On Delay Time | 9.9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 65m Ω @ 9A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 675pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 18A Ta |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
Rise Time | 79ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V |
Vgs (Max) | ±15V |
Fall Time (Typ) | 38 ns |
Turn-Off Delay Time | 19 ns |
Continuous Drain Current (ID) | 18A |
Threshold Voltage | 1.8V |
Gate to Source Voltage (Vgs) | 15V |
Drain to Source Breakdown Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 54A |
Avalanche Energy Rating (Eas) | 72 mJ |
Height | 2.38mm |
Length | 6.73mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |