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NTD20N06L-1G

MOSFET N-CH 60V 20A IPAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTD20N06L-1G
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 602
  • Description: MOSFET N-CH 60V 20A IPAK (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.36W Ta 60W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 48m Ω @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 98ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 62 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 128 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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