Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 14 hours ago) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 20A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 1.36W Ta 60W Tj |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 60W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 48m Ω @ 10A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 990pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20A Ta |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 5V |
Rise Time | 98ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V |
Vgs (Max) | ±15V |
Fall Time (Typ) | 62 ns |
Turn-Off Delay Time | 25 ns |
Continuous Drain Current (ID) | 20A |
Gate to Source Voltage (Vgs) | 15V |
Drain-source On Resistance-Max | 0.048Ohm |
Drain to Source Breakdown Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 60A |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |