NTD23N03RT4
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 225pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A Ta 17.1A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 3.76nC @ 4.5V |
| Rise Time | 14.9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 5V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 9.9 ns |
| Continuous Drain Current (ID) | 17.1A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 3.8A |
| Drain-source On Resistance-Max | 0.06Ohm |
| Drain to Source Breakdown Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 40A |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 25V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 23A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.14W Ta 22.3W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 22.3W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
See Relate Datesheet
