Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Surface Mount | NO |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Resistance | 94MOhm |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 12A |
Pin Count | 4 |
JESD-30 Code | R-PSIP-T3 |
Number of Elements | 1 |
Power Dissipation-Max | 1.5W Ta 48W Tj |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 48W |
Case Connection | DRAIN |
Turn On Delay Time | 7.7 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 94m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 12A Ta |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Rise Time | 32.3ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 23.9 ns |
Turn-Off Delay Time | 25.2 ns |
Continuous Drain Current (ID) | 12A |
Threshold Voltage | 2.9V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |