NTD3055L104-1G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Surface Mount | NO |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 25A |
| Pin Count | 4 |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.5W Ta 48W Tj |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 48W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 104m Ω @ 6A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 12A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| Rise Time | 104ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Fall Time (Typ) | 40.5 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | 1.6V |
| Gate to Source Voltage (Vgs) | 15V |
| Drain to Source Breakdown Voltage | 60V |
| Nominal Vgs | 2 V |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
