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NTD3055L104-1G

Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Rail


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTD3055L104-1G
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 735
  • Description: Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Rail (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 25A
Pin Count 4
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 1.5W Ta 48W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 104ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 40.5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage 60V
Nominal Vgs 2 V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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