Parameters | |
---|---|
Rds On (Max) @ Id, Vgs | 16.5m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 584pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 7.8A Ta 32A Tc |
Gate Charge (Qg) (Max) @ Vgs | 5.78nC @ 4.5V |
Rise Time | 19.5ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3.5 ns |
Turn-Off Delay Time | 16.7 ns |
Continuous Drain Current (ID) | 45A |
Threshold Voltage | 1.7V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 32A |
Drain-source On Resistance-Max | 0.023Ohm |
Drain to Source Breakdown Voltage | 25V |
REACH SVHC | Unknown |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 25V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 40A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PSIP-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 1.5W Ta 50W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.1W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |