Parameters | |
---|---|
Lifecycle Status | ACTIVE (Last Updated: 2 hours ago) |
JESD-30 Code | R-PSSO-G2 |
Contact Plating | Tin |
Number of Elements | 1 |
Mounting Type | Surface Mount |
Power Dissipation-Max | 1.27W Ta 35.3W Tc |
Element Configuration | Single |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operating Mode | ENHANCEMENT MODE |
Surface Mount | YES |
Power Dissipation | 1.94W |
Number of Pins | 4 |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 13m Ω @ 30A, 10V |
Transistor Element Material | SILICON |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Operating Temperature | -55°C~175°C TJ |
Input Capacitance (Ciss) (Max) @ Vds | 940pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 7.6A Ta 40A Tc |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
Rise Time | 16.1ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 11.5V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 16.1 ns |
Turn-Off Delay Time | 17.2 ns |
Published | 2008 |
Continuous Drain Current (ID) | 9A |
JESD-609 Code | e3 |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0259Ohm |
Drain to Source Breakdown Voltage | 30V |
Pbfree Code | yes |
Pulsed Drain Current-Max (IDM) | 90A |
Part Status | Active |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free | Lead Free |
Number of Terminations | 2 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Factory Lead Time | 1 Week |
Pin Count | 4 |